TYPE

I_T(AV)

T_C

V_DRM

I_TSM@T_VJIM&10 ms

I²t

V_TM@ᲛᲔ_T& T_J=25℃

Tq

@ᲛᲔ_T& T_J=125℃

di/dt=25A/μS

dv/dt=50v/μs

V_D=0.67V_DRM

T_jm

R_jc

R_cs

F

m

გარეთ

ხაზი

A

℃

V

A

A²s

V

A

μs

℃

℃/W

℃/W

KN

Kg

KN760-25

760

70

2500

14000

9.8×10⁵

2.10

2000 წ

40

125

0.022

0.005

22

0.6

T8C

TYPE

I_F(AV)

T_C

V_RRM

I_TSM@T_VJIM&10 ms

I²t

V_FM@ᲛᲔ_F& T_J=25℃

Trr

@ᲛᲔ_FM=320A;

di/dt=25A/μS

T_J=125℃ ვ_D= 100 ვ

T_jm

R_jc

A

℃

V

A

A²s

V

A

μs

℃

℃/W

KN760-25

202

70

2500

4000

8×10⁴

3.00

1200

5.6

125

0.01